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ADVANCE TECHNICAL INFORMATION
HiPerFET TM MOSFETs
ISOPLUS220 TM
Electrically Isolated Back Surface
IXFC 26N50
IXFC 24N50
V DSS I D25
500 V 23 A
500 V 21 A
t rr ≤ 250 ns
R DS(on)
0.20 ?
0.23 ?
N-Channel Enhancement Mode
High dV/dt, Low t rr , HDMOS TM Family
ISOPLUS 220LV TM
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
500
500
V
V
S
V GS
V GSM
I D25
I DM
I AR
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, Pulse width limited by T JM
T C = 25 ° C
26N50
24N50
26N50
24N50
26N50
24N50
± 20
± 30
23
21
92
84
26
24
V
V
A
A
A
A
A
A
G
D
G = Gate
S = Source
Isolated back surface*
D = Drain
E AR
dv/dt
P D
T J
T JM
T stg
T L
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
30
5
230
-55 ... +150
150
-55 ... +150
300
mJ
V/ns
W
° C
° C
° C
° C
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
V ISOL
Weight
50/60 Hz, RMS
t = 1 minute leads-to-tab
2500
3
V~
g
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
Symbol
V DSS
Test Conditions
V GS = 0 V, I D = 250uA
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
500 V
DC choppers
AC motor control
Advantages
Easy assembly: no screws, or isolation
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 4mA
V GS = ± 20 V DC , V DS = 0
V DS = 0.8?V DSS
V GS = 0 V
V GS = 10 V, I D = I T
Notes 1 & 2
T J = 25 ° C
T J = 125 ° C
26N50
24N50
2
4
± 100
200
1
0.20
0.23
V
nA
μ A
mA
?
?
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
See IXFH26N50 data sheet for
IGBT characteristic curves
? 2003 IXYS All rights reserved
DS98755A(07/03)
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